2SC4095
器件描述：MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
器件厂商：NEC [NEC]
文件大小：107.18KB，共8页
Sponsor by e络盟器件资料摘要：
DATA SHEET
SILICON TRANSISTOR
2SC4095
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
Document No. P10367EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1987©
DESCRIPTION
The 2SC4095 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band.
2SC4095 features excellent power gain with very low-noise figures.
2SC4095 employs direct nitiride passivated base surface process (DNP
process) which is an NEC proprietary new fabrication technique which
provides excellent noise figures at high current values. This allows
excellent associated gain and very wide dynamic range.
FEATURES
• NF = 1.8 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 5 mA
• G01S21eG01
2
= 9.5 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 10 mA
ABSOLUTE MAXIMUM RATINGS (TA = 25 G01C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation PT 200 mW
Junction Temperature Tj 150 G02C
Storage Temperature Tstg G0365 to +150 G02C
ELECTRICAL CHARACTERISTICS (TA = 25 G01C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 1.0 G01AVCB = 10 V, IE = 0
Emitter Cutoff Current IEBO 1.0 G01AVEB = 1 V, IC = 0
DC Current Gain hFE 50 100 250 VCE = 6 V, IC = 10 mA
Gain Bandwidth Product fT 10 GHz VCE = 6 V, IC = 10 mA f = 1.0 GHz
Feed-Back Capacitance Cre 0.25 0.8 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain G01S21eG01
2
7.5 9.5 dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Maximum Available Gain MAG 12 dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Noise Figure NF 1.8 3.0 dB VCE = 6 V, IC = 5 mA, f = 2.0 GHz
hFE Classification
Class R46/RDF * R47/RDG * R48/RDH *
Marking R46 R47 R48
hFE 50 to 100 80 to 160 125 to 250 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
5° 5°
5° 5°
0 to 0.1
0.8
2.9±0.2
(1.8) (1.9)
0.95
0.85
1.1
+0.2 −
0.1
0.16
+0.1 −
0.06
0.4
41
32
+0.1 −
0.05
2.8
+0.2
−0.3
1.5
+0.2
−0.1
0.6
+0.1 −
0.05
0.4
+0.1 −
0.05
0.4
+0.1 −
0.05
SILICON TRANSISTOR
2SC4095
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
Document No. P10367EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
1987©
DESCRIPTION
The 2SC4095 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band.
2SC4095 features excellent power gain with very low-noise figures.
2SC4095 employs direct nitiride passivated base surface process (DNP
process) which is an NEC proprietary new fabrication technique which
provides excellent noise figures at high current values. This allows
excellent associated gain and very wide dynamic range.
FEATURES
• NF = 1.8 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 5 mA
• G01S21eG01
2
= 9.5 dB TYP. @ f = 2.0 GHz, VCE = 6 V, IC = 10 mA
ABSOLUTE MAXIMUM RATINGS (TA = 25 G01C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation PT 200 mW
Junction Temperature Tj 150 G02C
Storage Temperature Tstg G0365 to +150 G02C
ELECTRICAL CHARACTERISTICS (TA = 25 G01C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 1.0 G01AVCB = 10 V, IE = 0
Emitter Cutoff Current IEBO 1.0 G01AVEB = 1 V, IC = 0
DC Current Gain hFE 50 100 250 VCE = 6 V, IC = 10 mA
Gain Bandwidth Product fT 10 GHz VCE = 6 V, IC = 10 mA f = 1.0 GHz
Feed-Back Capacitance Cre 0.25 0.8 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain G01S21eG01
2
7.5 9.5 dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Maximum Available Gain MAG 12 dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Noise Figure NF 1.8 3.0 dB VCE = 6 V, IC = 5 mA, f = 2.0 GHz
hFE Classification
Class R46/RDF * R47/RDG * R48/RDH *
Marking R46 R47 R48
hFE 50 to 100 80 to 160 125 to 250 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
Emitter
5° 5°
5° 5°
0 to 0.1
0.8
2.9±0.2
(1.8) (1.9)
0.95
0.85
1.1
+0.2 −
0.1
0.16
+0.1 −
0.06
0.4
41
32
+0.1 −
0.05
2.8
+0.2
−0.3
1.5
+0.2
−0.1
0.6
+0.1 −
0.05
0.4
+0.1 −
0.05
0.4
+0.1 −
0.05