87
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
Application : Switching Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC4073
500
400
10
5(Pulse10)
2
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC4073
100max
100max
400min
10to30
0.5max
1.3max
10typ
30typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=500V
VEB=10V
IC=25mA
VCE=4V, IC=2A
IC=2A, IB=0.4A
IC=2A, IB=0.4A
VCE=12V, IE=–0.3A
VCB=10V, f=1MHz
2SC4073
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) ton•tstg•tf–IC Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
Base-Emitter Saturation Voltage V
BE(sat)
(V)
Pc–Ta Derating
Reverse Bias Safe Operating AreaSafe Operating Area (Single Pulse)
0
0
1
2
3
4
5
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
600mA
400mA
300mA
200mA
I
B
=800mA
100mA
50mA
0.01 0.10.05 1 50.5
0
2
1
(IC/IB=5)
Collector Current IC(A)
VBE(sat)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
25˚C
–55˚CVCE(sat)
1
2
5
˚
C
(
C
a
s
e
T
e
m
p
)
0.1 10.5 5
0.1
0.5
5
1
Switching Time
t
on•
t
stg•
t
f
(
µ
s)
Collector Current IC(A)
tstg
ton
tf
VCC 200V
IC:IB1:–IB2=10:1:2
0.3
1
5
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
10 505 500100
1
0.5
0.1
0.05
0.01
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
L=3mH
IB2=–0.5A
Duty:less than1%
10 5052 100 500
0.05
0.01
1
0.5
0.1
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
DC
10ms
100
µ
s1ms
0.01 0.10.05 1 50.5
5
10
50
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
125˚C
25˚C
–55˚C
0
2
1
4
3
5
0 1.41.20.4 0.6 0.8 1.00.2
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp) –55˚C (Case Temp)
25˚C (Case Temp)
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
200
RL
(Ω)
100
IC
(A)
2
VBB2
(V)
–5
IB2
(A)
–0.4
ton
(m s)
1max
tstg
(m s)
3max
tf
(m s)
0.5max
IB1
(A)
0.2
VBB1
(V)
10
External Dimensions FM20(TO220F)
ø3.3±0.2
10.1±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9 ±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8
c
0.5
2.4±0.20.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.