85
Application : DC Motor Driver and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC4064
50
50
6
12
3
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SC4064
100max
10max
50min
50min
0.35max
40typ
180typ
Unit
m A
m A
V
V
MHz
pF
Conditions
VCB=50V
VEB=6V
IC=25mA
VCE=1V, IC=6A
IC=6A, IB=0.3A
VCE=12V, IE=–0.5A
VCB=12V, f=1MHz
2SC4064
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
0
0
2
4
8
6
10
12
1.60.8 2.4 3.2 4 4.8 5.6 6
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
20mA
100mA
60mA
40mA
20mA
10mA
IB=5mA
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
0
1.0
1.3
0.5
0.002 0.01 0.1 31
Base Current IB(A)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
IC=1A
12A
3A
6A
9A
0.02 0.1 1 10 12
20
50
100
1000
500
Collector Current IC(A)
DC Current Gain h
FE
(VCE=1V)
Typ
0.02 0.1 1 10 12
20
50
100
1000
500
Collector Current IC(A)
DC Current Gain h
FE
(VCE=1V)
0.3
0.5
1
5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
10 503 5 100
0.05
0.1
1
0.5
30
10
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
1ms
0
12
10
2
4
8
6
0 1.11.00.5
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=1V)
125˚C (Case Temp) 25˚C (Case Temp)
–30˚C (Case Temp)
25˚C
–30˚C
125˚C
–0.05 –0.1 –1–0.5 –5 –12–10
20
10
0
30
Cut-off Frequency f
T
(MH
Z
)
(VCE=12V)
Emitter Current IE(A)
Typ
40
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
50x50x2
100x100x2
150x150x2
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
24
RL
(Ω)
4
IC
(A)
6
VBB2
(V)
–5
IB2
(A)
–0.12
ton
(m s)
0.6typ
tstg
(m s)
1.4typ
tf
(m s)
0.4typ
IB1
(A)
0.12
VBB1
(V)
10
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1567)
External Dimensions FM20(TO220F)
ø3.3±0.2
10.1±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9 ±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8
c
0.5
2.4±0.20.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
LOW VCE (sat)