SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Triple Diffused Planar Silicon Transistor
900V/50mA Switching Applications
Ordering number:EN2477B
2SC4030
D1598HA (KT)/D051MH (KOTO) No.2477–1/4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2049C
[2SC4030]
Features
· High breakdown voltage (V
CEO
min=900V).
· Small Output Capacitance (C
ob
typ=2.0pF).
· Wide ASO (adoption of MBIT process).
· High reliability (adoption of HVP process).
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220MF
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC
0071V
egatloVrettimE-ot-rotcello
OEC
009V
egatloVesaB-ot-rettimEV
OBE
5V
tnerruCrotcelloCI
C
05Am
)esluP(tnerruCrotcello
PC
051Am
noitapissiDrotcelloCP
C
56.1W
2.1W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Tc=25˚C
retemaraPlobmySsnoitidnoC
sgnitaR
tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC
V
BC
I,V009=
E
0=1Aµ
tnerruCffotuCrettimEI
OBE
V
BE
I,V4=
C
0 µ
niaGtnerruCCD h
EF
V
EC
I,V5=
C
Am2= 0205021
tcudorPhtdiwdnaB-niaGf
T
V
EC
I,V01=
C
Am2= 6zHM
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC
I
C
I,Am5=
B
Am1= 5V
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB
I
C
I,Am5=
B
Am1=2V
10.2
20.9
11.5
9.4
0.8
1.6
1.2
0.9
11.0
8.8
4.5
1.3
0.4
2.552.55
2.7
123