1
Power Transistors
2SC4004
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
n
Features
l High-speed switching
l High collector to base voltage V
CBO
l Wide area of safe operation (ASO)
l Satisfactory linearity of foward current transfer ratio h
FE
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
900
900
800
7
2
1
0.3
30
2
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
T
C
=25 C
Ta=25 C
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Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 900V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 5V, I
C
= 0.05A
V
CE
= 5V, I
C
= 0.5A
I
C
= 0.2A, I
B
= 0.04A
I
C
= 0.2A, I
B
= 0.04A
V
CE
= 10V, I
C
= 0.05A, f = 1MHz
I
C
= 0.2A, I
B1
= 0.04A, I
B2
= – 0.04A,
V
CC
= 250V
min
800
6
3
typ
4
max
50
50
1.5
1.0
1.0
3.0
1.0
Unit
m A
m A
V
V
V
MHz
m s
m s
m s
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(b)
10.0– 0.2 4.2– 0.2
2.7– 0.2
1.3– 0.2
0.8– 0.1
1.7– 0.2
1.05– 0.1
2.54– 0.3
5.08– 0.5
0.7
–
0.1
7.5
–
0.2
4.2
–
0.2
16.7
–
0.3
14.0
–
0.5
4.0
Solder Dip
5.5– 0.2
f 3.1– 0.1
0.5
+0.2
–0.1
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