1
Power Transistors
2SC3982, 2SC3982A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
n
Features
l High-speed switching
l High collector to base voltage V
CBO
l Wide area of safe operation (ASO)
l Satisfactory linearity of foward current transfer ratio h
FE
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
900
1000
900
1000
800
7
15
10
5
150
3.5
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
2SC3982
2SC3982A
2SC3982
2SC3982A
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 900V, I
E
= 0
V
CB
= 1000V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 4A
I
C
= 4A, I
B
= 0.8A
I
C
= 4A, I
B
= 0.8A
V
CE
= 5V, I
C
= 1A, f = 1MHz
I
C
= 4A, I
B1
= 0.8A, I
B2
= –1.6A,
V
CC
= 250V
min
800
8
6
typ
15
max
50
50
50
1.5
1.5
0.7
3.0
0.3
Unit
m A
m A
V
V
V
MHz
m s
m s
m s
2SC3982
2SC3982A
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3L Package
20.0– 0.5
6.0
10.0
26.0
–
0.5
20.0
–
0.5
1.5
2.5
Solder Dip
10.9– 0.5
123
2.0– 0.3
3.0– 0.3
1.0– 0.2
5.0– 0.3
3.0
4.0
2.0
5.45– 0.3
0.6– 0.2
1.5
2.7– 0.3
1.5
2.0
f 3.3– 0.2
3.0