1
Power Transistors
2SC3943
Silicon NPN epitaxial planar type
For video amplifier
n
Features
l Small transition frequency f
T
l Small collector output capacitance C
ob
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CER
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
110
100
50
3.5
300
150
8
2.0
150
–55 to +150
Unit
V
V
V
V
mA
mA
W
˚C
˚C
T
C
=25 C
Ta=25 C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0– 0.2
5.5– 0.2
7.5
–
0.2
16.7
–
0.3
0.7
–
0.1
14.0
–
0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4– 0.1
1.3– 0.2
0.8– 0.1
2.54– 0.25
5.08– 0.5
213
2.7– 0.2
4.2– 0.2
4.2
–
0.2
f 3.1– 0.1
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CEO
V
CBO
V
CER
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T1
f
T2
C
ob
Conditions
V
CE
= 35V, I
B
= 0
I
C
= 100m A, I
E
= 0
I
C
= 500m A, R
BE
= 470W
I
C
= 1mA, I
B
= 0
I
E
= 100m A, I
C
= 0
V
CE
= 5V, I
C
= 100mA
I
C
= 150mA, I
B
= 15mA
V
CE
= 10V, I
C
= 10mA, f = 10MHz
V
CE
= 10V, I
C
= 110mA, f = 10MHz
V
CB
= 30V, I
E
= 0, f = 1MHz
min
110
100
50
3.5
20
typ
300
350
3.5
max
10
0.5
Unit
m A
V
V
V
V
V
MHz
MHz
pF