1
Power Transistors
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
CER
V
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 100m A, I
E
= 0
I
C
= 5mA, I
B
= 0
I
C
= 100m A, I
B
= 0, R
BE
= 1kW
I
E
= 100m A, I
C
= 0
V
CB
= 10V, I
C
= 10mA
I
C
= 50mA, I
B
= 5mA
V
CE
= 30V, I
C
= 10mA, f = 1MHz
V
CB
= 50V, I
E
= 0, f = 1MHz
min
350
300
350
7.5
40
50
typ max
2
2
250
1
5
Unit
m A
m A
V
V
V
V
V
MHz
pF
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
350
300
7.5
400
200
15
2.0
150
–55 to +150
Unit
V
V
V
mA
mA
W
˚C
˚C
T
C
=25 C
Ta=25 C
2SC3946
Silicon NPN triple diffusion planar type
For color TV horizontal deflection driver
n
Features
l High collector to emitter V
CEO
l Large collector power dissipation P
C
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0– 0.2
5.5– 0.2
7.5
–
0.2
16.7
–
0.3
0.7
–
0.1
14.0
–
0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4– 0.1
1.3– 0.2
0.8– 0.1
2.54– 0.25
5.08– 0.5
213
2.7– 0.2
4.2– 0.2
4.2
–
0.2
f 3.1– 0.1