1
Transistor
2SC3929, 2SC3929A
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SA1531 and 2SA1531A
n
Features
l Low noise voltage NV.
l High foward current transfer ratio h
FE
.
l S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
35
55
35
55
5
100
50
150
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
2SC3929
2SC3929A
2SC3929
2SC3929A
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Noise voltage
Transition frequency
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
V
BE
NV
f
T
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10m A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 5V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 1V, I
C
= 100mA
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100kW , Function = FLAT
V
CB
= 5V, I
E
= –2mA, f = 200MHz
min
35
55
35
55
5
180
typ
0.7
80
max
100
1
700
0.6
1
150
Unit
nA
m A
V
V
V
V
V
mV
MHz
*1
h
FE1
Rank classification
Rank R S T
h
FE
180 ~ 360 260 ~ 520 360 ~ 700
2SC3929 SR SS ST
2SC3929A TR TS TT
Marking symbol : S
(2SC3929)
T
(2SC3929A)
Unit: mm
1:Base
2:Emitter EIAJ:SC–70
3:Collector S–Mini Type Package
2.1– 0.1
1.3
–
0.1
0.9
–
0.1
0.7
–
0.1
0.3
+0.1 –0
0.15
+0.1 –0.05
2.0
–
0.2
1.25– 0.1 0.4250.425
1
3
2
0.65
0.2
0
.65
0 to 0.1
0.2– 0.1
Marking
Symbol
2SC3929
2SC3929A
2SC3929
2SC3929A