1
Power Transistors
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Ratings
500
500
400
7
20
10
5
70
3
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
T
C
=25 C
Ta=25 C
2SC3872
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
n
Features
l High-speed switching
l High collector to base voltage V
CBO
l Wide area of safe operation (ASO)
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 5A
I
C
= 5A, I
B
= 1A
I
C
= 5A, I
B
= 1A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 5A, I
B1
= 1A, I
B2
= –2A,
V
CC
= 150V
min
400
15
8
typ
25
max
100
100
1
1.5
0.7
2
0.3
Unit
m A
m A
V
V
V
MHz
m s
m s
m s
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
15.0– 0.3
21.0
–
0.5
16.2
–
0.5
12.5
Solder Dip
3.5
0
.7
15.0
–
0.2
5.0– 0.2
11.0– 0.2
10.9– 0.5
5.45– 0.3
321
1.1– 0.1
2.0– 0.2
0.6– 0.2
2.0– 0.1
f 3.2– 0.1
3.2
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg