76
2SC3851/3851A
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
0
0
1
2
3
4
21 3456
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
60mA
I
B
=70mA
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
50mA
40mA
30mA
20mA
10mA
5mA
30
20
10
0
0 50 100 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
0
1.0
0.5
0.005 0.01 0.10.05 10.5
Base Current IB(A)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
IC=1A
2A
3A
0.01 0.1 0.5 1 4
20
50
100
500
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
Typ
0.5
1
5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
10 5035 80
0.05
0.1
1
0.5
10
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
1ms
(VCE=4V)
0.01 0.10.05 10.5 4
20
50
100
500
Collector Current IC(A)
DC Current Gain h
FE
25˚C
–30˚C
125˚C
0
4
2
3
1
0 1.21.00.5
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
–0.005 –0.1 –0.5 –1 –4
20
10
0
30
40
Cut-off Frequency f
T
(MH
Z
)
(VCE=12V)
Emitter Current IE(A)
Typ
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A)
Application : Audio and PPC High Voltage Power Supply, and General Purpose
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
12
RL
(Ω)
6
IC
(A)
2
VBB2
(V)
–5
IB2
(mA)
–200
ton
(m s)
0.2typ
tstg
(m s)
1typ
tf
(m s)
0.3typ
IB1
(mA)
200
VBB1
(V)
10
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
6
4
1
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
2SC3851
80
60min
Unit
m A
V
m A
V
V
MHz
pF
(Ta=25°C) (Ta=25°C)
2SC3851A
100
80
2SC3851
80
60
2SC3851A
100
80min
100max
40to320
0.5max
15typ
60typ
External Dimensions FM20(TO220F)
ø3.3±0.2
10.1±0.2
4.0
±0.2
16.9
±0.3
13.0min
8.4
±0.2
0.8
±0.2
3.9 ±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8
c
0.5
2.4±0.2
0.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
100max
Conditions
VCB=
VEB=6V
IC=25mA
VCE=4V, IC=1A
IC=2A, IB=0.2A
VCE=12V, IE=–0.2A
VCB=10V, f=1MHz
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB