2SC3834
器件描述：Silicon NPN Triple Diffused Planar Transistor(Humidifier, DC-DC Converter, and General Purpose)
器件厂商：SANKEN [Sanken electric]
文件大小：23.04KB，共1页
Sponsor by e络盟器件资料摘要：
74
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC3834
200
120
8
7(Pulse14)
3
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC3834
100max
100max
120min
70to220
0.5max
1.2max
30typ
110typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=200V
VEB=8V
IC=50mA
VCE=4V, IC=3A
IC=3A, IB=0.3A
IC=3A, IB=0.3A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
2SC3834
(Ta=25°C) (Ta=25°C)
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
50
RL
(Ω)
16.7
IC
(A)
3
VBB2
(V)
–5
IB2
(A)
–0.6
ton
(m s)
0.5max
tstg
(m s)
3.0max
tf
(m s)
0.5max
IB1
(A)
0.3
VBB1
(V)
10
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
0
2
2.6
1
0.005 0.01 0.10.05 10.5
Base Current IB(A)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
I
C
=1A
3A
5A
0.02 0.1 0.5 1 75
20
50
100
200
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
Typ
–0.01 –0.1 –1–0.05 –0.5 –5
20
10
0
30
Cut-off Frequency f
T
(MH
Z
)
(VCE=12V)
Emitter Current IE(A)
10 120505 200
0.05
1
0.5
0.1
20
10
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
100ms
10ms
50
40
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
0
0
1
2
3
4
5
6
7
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
60mA
40mA
20mA
100mA
150mA200mA
IB=10mA
0
7
2
3
4
5
6
1
0 1.11.00.5
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=4V)
0.01 0.05 0.1 0.5 1 5 7
20
50
300
100
Collector Current IC(A)
DC Current Gain h
FE
25˚C
–30˚C
125˚C
0.3
0.5
1
4
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
External Dimensions MT-25(TO220)
BE
2.5 2.5
C
16.0
±0.7
12.0min
4.0max
8.8
±0.2
1.35
0.65
+0.2
-0.1
10.2±0.2
ø3.75±0.2
3.0
±0.2
4.8±0.2
1.4
2.0±0.1
a
b
Weight : Approx 2.6g
a. Type No.
b. Lot No.
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application : Humidifier, DC-DC Converter, and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC3834
200
120
8
7(Pulse14)
3
50(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC3834
100max
100max
120min
70to220
0.5max
1.2max
30typ
110typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=200V
VEB=8V
IC=50mA
VCE=4V, IC=3A
IC=3A, IB=0.3A
IC=3A, IB=0.3A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
2SC3834
(Ta=25°C) (Ta=25°C)
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
50
RL
(Ω)
16.7
IC
(A)
3
VBB2
(V)
–5
IB2
(A)
–0.6
ton
(m s)
0.5max
tstg
(m s)
3.0max
tf
(m s)
0.5max
IB1
(A)
0.3
VBB1
(V)
10
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
0
2
2.6
1
0.005 0.01 0.10.05 10.5
Base Current IB(A)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
I
C
=1A
3A
5A
0.02 0.1 0.5 1 75
20
50
100
200
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
Typ
–0.01 –0.1 –1–0.05 –0.5 –5
20
10
0
30
Cut-off Frequency f
T
(MH
Z
)
(VCE=12V)
Emitter Current IE(A)
10 120505 200
0.05
1
0.5
0.1
20
10
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
100ms
10ms
50
40
30
20
10
2
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
0
0
1
2
3
4
5
6
7
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
60mA
40mA
20mA
100mA
150mA200mA
IB=10mA
0
7
2
3
4
5
6
1
0 1.11.00.5
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=4V)
0.01 0.05 0.1 0.5 1 5 7
20
50
300
100
Collector Current IC(A)
DC Current Gain h
FE
25˚C
–30˚C
125˚C
0.3
0.5
1
4
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
External Dimensions MT-25(TO220)
BE
2.5 2.5
C
16.0
±0.7
12.0min
4.0max
8.8
±0.2
1.35
0.65
+0.2
-0.1
10.2±0.2
ø3.75±0.2
3.0
±0.2
4.8±0.2
1.4
2.0±0.1
a
b
Weight : Approx 2.6g
a. Type No.
b. Lot No.