75
Silicon NPN Triple Diffused Planar Transistor (Switching Transistor)
Application : Humidifier, DC-DC Converter, and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC3835
200
120
8
7(Pulse14)
3
70(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC3835
100max
100max
120min
70to220
0.5max
1.2max
30typ
110typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=200V
VEB=8V
IC=50mA
VCE=4V, IC=3A
IC=3A, IB=0.3A
IC=3A, IB=0.3A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
2SC3835
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
0
2
2.6
1
0.005 0.01 0.10.05 10.5
Base Current IB(A)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
I
C
=1A
3A
0.02 0.1 0.5 1 75
20
50
100
200
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
5A
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
Typ
–0.01 –0.1 –1–0.05 –0.5 –5
20
10
0
30
Cut-off Frequency f
T
(MH
Z
)
(VCE=12V)
Emitter Current IE(A)
10 120505 200
0.05
1
0.5
0.1
20
10
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
100
µ
s
10ms
0
0
1
2
3
4
5
6
7
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
60mA
40mA
20mA
100mA
150mA200mA
IB=10mA
0.4
0.5
1
5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
0
7
2
3
4
5
6
1
0 1.11.00.5
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=4V)
0.01 0.05 0.1 0.5 1 5 7
20
50
300
100
Collector Current IC(A)
DC Current Gain h
FE
25˚C
–30˚C
125˚C
70
60
50
40
30
20
10
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
50
RL
(Ω)
16.7
IC
(A)
3
VBB2
(V)
–5
IB2
(A)
–0.6
ton
(m s)
0.5max
tstg
(m s)
3.0max
tf
(m s)
0.5max
IB1
(A)
0.3
VBB1
(V)
10
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.