2SC3810
器件描述：NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE
器件厂商：NEC [NEC]
文件大小：34.48KB，共4页
Sponsor by e络盟器件资料摘要：
Document No. P11698EJ1V0DS00 (1st edition)
Date Published July 1996 P
Printed in Japan
SILICON TRANSISTOR
2SC3810
FEATURES
• The 2SC3810 is an NPN silicon epitaxial dual transistor having
a large-gain-bandwidth product performance in a wide operating
current range.
• Dual chips in one package can achieve high performance for
differential amplifiers and current mode logic (CML) circuits.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
NPN SILICON EPITAXIAL TRANSISTOR
FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS
INDUSTRIAL USE
PACKAGE DIMENSIONS (in millimeters)
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 65/unit mA
Total Power Dissipation PT 240/unit mW
Thermal Resistance (junction to case) Rth (j-c) 90/unit °C/W
Junction Temperature Tj 200 °C
Storage Temperature Tstg -65 to +200 °C
5.0 MIN.
3
4
2
1
5
3
5
E
41
C1
B1 B2
C2
(#492C)
5.0 MIN.
0.6 ± 0.1
0.6
±
0.1
1.25
±
0.1
2.0 MAX.
5.0 MIN.
3.5
+0.3
-0.2
0.1
+0.06 -
0.03
PIN CONNECTIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector to Base Breakdown Voltage BVCBO IC = 10 µA20V
Emitter to Base Breakdown Voltage BVEBO IE = 10 µA, IC = 0 1.5 V
Collector to Emitter Breakdown Voltage BVCEO IC = 1 mA, RBE = ∞ 10 V
Collector Cut-off Current ICBO VCB = 10 V, IE = 0 1.0 µA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 1.0 µA
DC Current Gain hFE VCE = 8 V, IC = 20 mA 50 100 250
hFE Ratio hFE1/hFE2
Note 1
VCE = 8 V, IC = 20 mA 0.6 1.0
Difference of Base to Emitter Voltage ∆ VBE VCE = 8 V, IC = 20 mA 30 mV
Gain Bandwidth Product fT
Note 2
VCE = 8 V, IC = 20 mA 7 8 GHz
Feedback Capacitance Cre
Note 3
VCB = 10 V, IE = 0, f = 1.0 MHz 0.5 1.0 pF
Notes 1. hFE1 is the smaller hFE value of the 2 transistors.
2. Measured using a single-type device (equivalent to the 2SC3604).
3. Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should be connected to
the guard terminal of the bridge.
© 1996
DATA SHEET
Date Published July 1996 P
Printed in Japan
SILICON TRANSISTOR
2SC3810
FEATURES
• The 2SC3810 is an NPN silicon epitaxial dual transistor having
a large-gain-bandwidth product performance in a wide operating
current range.
• Dual chips in one package can achieve high performance for
differential amplifiers and current mode logic (CML) circuits.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
NPN SILICON EPITAXIAL TRANSISTOR
FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS
INDUSTRIAL USE
PACKAGE DIMENSIONS (in millimeters)
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 65/unit mA
Total Power Dissipation PT 240/unit mW
Thermal Resistance (junction to case) Rth (j-c) 90/unit °C/W
Junction Temperature Tj 200 °C
Storage Temperature Tstg -65 to +200 °C
5.0 MIN.
3
4
2
1
5
3
5
E
41
C1
B1 B2
C2
(#492C)
5.0 MIN.
0.6 ± 0.1
0.6
±
0.1
1.25
±
0.1
2.0 MAX.
5.0 MIN.
3.5
+0.3
-0.2
0.1
+0.06 -
0.03
PIN CONNECTIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector to Base Breakdown Voltage BVCBO IC = 10 µA20V
Emitter to Base Breakdown Voltage BVEBO IE = 10 µA, IC = 0 1.5 V
Collector to Emitter Breakdown Voltage BVCEO IC = 1 mA, RBE = ∞ 10 V
Collector Cut-off Current ICBO VCB = 10 V, IE = 0 1.0 µA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 1.0 µA
DC Current Gain hFE VCE = 8 V, IC = 20 mA 50 100 250
hFE Ratio hFE1/hFE2
Note 1
VCE = 8 V, IC = 20 mA 0.6 1.0
Difference of Base to Emitter Voltage ∆ VBE VCE = 8 V, IC = 20 mA 30 mV
Gain Bandwidth Product fT
Note 2
VCE = 8 V, IC = 20 mA 7 8 GHz
Feedback Capacitance Cre
Note 3
VCB = 10 V, IE = 0, f = 1.0 MHz 0.5 1.0 pF
Notes 1. hFE1 is the smaller hFE value of the 2 transistors.
2. Measured using a single-type device (equivalent to the 2SC3604).
3. Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should be connected to
the guard terminal of the bridge.
© 1996
DATA SHEET