1
Transistor
2SC3811
Silicon NPN epitaxial planer type
For high speed switching
n
Features
l High-speed switching.
l Low collector to emitter saturation voltage V
CE(sat)
.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Base
3:Collector
JEDEC:TO–92
EIAJ:SC–43A
5.0– 0.2 4.0– 0.2
5.1
–
0.2
13.5
–
0.5
0.45
+0.2
–0.10.45
+0.2
–0.1
1.27 1.27
2.3
–
0.2
2.54– 0.15
213
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
40
40
5
300
100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Turn-off time
Storage time
Symbol
I
CBO
I
EBO
h
FE
*
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
off
t
stg
Conditions
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 1V, I
C
= 10mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
Refer to the measurment circuit
min
60
typ
0.17
450
2
17
17
10
max
0.1
0.1
200
0.25
1.0
6
Unit
m A
m A
V
V
MHz
pF
ns
ns
ns
*
h
FE
Rank classification
Rank Q R
h
FE
60 ~ 120 90 ~ 200