1
Power Transistors
2SC3795, 2SC3795A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
n
Features
l High-speed switching
l High collector to base voltage V
CBO
l Low collector to emitter saturation voltage V
CE(sat)
l Full-pack package which can be installed to the heat sink with
one screw
n
Absolute Maximum Ratings (T
C
=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
800
900
800
900
500
8
10
5
3
40
2
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
2SC3795
2SC3795A
2SC3795
2SC3795A
T
C
=25 C
Ta=25 C
n
Electrical Characteristics (T
C
=25˚C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO(sus)
*
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 800V, I
E
= 0
V
CB
= 900V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 0.2A, L = 25mH
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 0.6A, I
B2
= – 0.6A,
V
CC
= 200V
min
500
15
8
typ
8
max
100
100
100
1
1.5
1
1.2
3
1
1.2
Unit
m A
m A
V
V
V
MHz
m s
m s
m s
2SC3795
2SC3795A
2SC3795
2SC3795A
2SC3795
2SC3795A
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0– 0.2
5.5– 0.2
7.5
–
0.2
16.7
–
0.3
0.7
–
0.1
14.0
–
0.5
Solder Dip
4.0
0.5
+0.2
–0.1
1.4– 0.1
1.3– 0.2
0.8– 0.1
2.54– 0.25
5.08– 0.5
213
2.7– 0.2
4.2– 0.2
4.2
–
0.2
f 3.1– 0.1
*
V
CEO(sus)
Test circuit
X
L 25mH
15V
1W
Y
G
6V
120W
50/60Hz
mercury relay