Transistors
1
2SC3757
Silicon NPN epitaxial planer type
For high speed switching
a73 Features
• High-speed switching
• Low collector to emitter saturation voltage V
CE(sat)
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
• Allowing pair use with 2SA1738
a73 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
40 V
Collector to emitter voltage V
CES
40 V
Emitter to base voltage V
EBO
5V
Peak collector current I
CP
300 mA
Collector current I
C
100 mA
Collector power dissipation P
C
200 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Marking Symbol: 2Y
Unit: mm
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
21
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5
°
10°
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1: Base JEDEC: TO-236
2: Emitter EIAJ: SC-59
3: Collector Mini Type Package
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CBO
V
CB
= 15 V, I
E
= 0 0.1 µA
Emitter cutoff current I
EBO
V
EB
= 4 V, I
C
= 0 0.1 µA
Forward current transfer ratio
*
h
FE
V
CE
= 1 V, I
C
= 10 mA 60 200
Collector to emitter saturation voltage V
CE(sat)
I
C
= 10 mA, I
B
= 1 mA 0.17 0.25 V
Base to emitter saturation voltage V
BE(sat)
I
C
= 10 mA, I
B
= 1 mA 1.0 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −10 mA, f = 200 MHz 450 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 2 6 pF
Turn-on time t
on
17 ns
Turn-off time t
off
Refere to the measurement circuit 17 ns
Storage time t
stg
10 ns
a73 Electrical Characteristics T
a
= 25°C ± 3°C
Note)
*
: Rank classification
Rank Q R
h
FE
60 to 120 90 to 200
Marking symbol 2YQ 2YR