1
Transistor
2SC3704
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
n
Features
l Low noise figure NF.
l High gain.
l High transition frequency f
T
.
l Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Bae JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65– 0.15 0.65– 0.15
3
1
2
0.95
0.95
1.9
–
0.2
0.4
+0.1 –0.05
1.1
+0.2 –0.1
0.8
0.4– 0.2
0 to 0.1
0.16
+0.1 –0.06
1.45
0.1 to 0.3
2.9
+0.2 –0.05
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
10
2
80
200
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Noise figure
Maximum unilateral power gain
Foward transfer gain
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
f
T
C
ob
NF
GUM
| S
21e
|
2
Conditions
V
CB
= 15V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 8V, I
C
= 20mA
V
CE
= 1V, I
C
= 3mA
V
CE
= 8V, I
C
= 20mA, f = 0.8GHz
V
CE
= 10V, I
E
= 0, f = 1MHz
V
CE
= 8V, I
C
= 7mA, f = 800MHz
V
CE
= 8V, I
C
= 20mA, f = 800MHz
V
CE
= 8V, I
C
= 20mA, f = 800MHz
min
50
80
typ
150
6
0.7
1.0
14
13
max
1
1
300
280
1.2
1.7
Unit
m A
m A
GHz
pF
dB
dB
dB
Marking symbol :2W