69
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor)
Application : Switching Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC3680
900
800
7
7(Pulse14)
3.5
120(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC3680
100max
100max
800min
10to30
0.5max
1.2max
6typ
105typ
Unit
m A
m A
V
V
V
MHz
pF
Conditions
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=3A
IC=3A, IB=0.6A
IC=3A, IB=0.6A
VCE=12V, IE=–2A
VCB=10V, f=1MHz
2SC3680
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) ton•tstg•tf–IC Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
Base-Emitter Saturation Voltage V
BE(sat)
(V)
Pc–Ta Derating
Reverse Bias Safe Operating AreaSafe Operating Area (Single Pulse)
0
0
4
2
6
7
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
700mA
500mA
300mA
200mA
IB=100mA
1A
0.02 0.10.05 1 50.5 7
0
1
(IC/IB=5)
Collector Current IC(A)
VBE(sat)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
25˚C
–
55˚C
VCE(sat)
1
2
5
˚
C
(
C
a
s
e
T
e
m
p
)
0.1 10.5 75
0.2
0.5
5
10
1
Switching Time
t
on•
t
stg•
t
f
(
µ
s)
Collector Current IC(A)
tstg
ton
tf
VCC 250V
IC:IB1:IB2=2:0.3:–1Const.
0.1
1
2
0.5
1 10 100 1000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
100 50050 1000
1
0.5
0.01
0.1
0.05
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
10 5052 100 500 1000
0.05
0.01
1
0.5
0.1
10
20
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
100
µ
s
10ms 1ms
0
7
2
4
6
0 1.20.4 0.6 0.8 1.00.2
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp) 25˚C (Case Temp)
–55˚C (Case Temp)
0.02 0.10.05 1 750.5
5
10
50
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
125˚C
25˚C
–55˚C
120
100
50
3.5
0
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
250
RL
(Ω)
83
IC
(A)
3
VBB2
(V)
–5
IB2
(A)
–1.5
ton
(m s)
1max
tstg
(m s)
5max
tf
(m s)
1max
IB1
(A)
0.45
VBB1
(V)
10
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.