DATA SHEET
SILICON TRANSISTOR
2SC3663
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
1997©
Document No. P10406EJ1V0DS00 (1st edition)
Date Published August 1997 N
Printed in Japan
FEATURES
• Low-voltage, low-current, low-noise and high-gain
NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz
GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz
• Ideal for battery drive of pagers, compact radio equipment,
cordless phones, etc.
• Gold electrode gives high reliability.
• Mini mold package, ideal for hybrid ICs.
ABSOLUTE MAXIMUM RATINGS (TA = 25 qC)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 15 V
Collector to Emitter Voltage VCEO 8V
Emitter to Base Voltage VEBO 2V
Collector Current IC 5mA
Total Power Dissipation PT 50 mW
Junction Temperature Tj 150 qC
Storage Temperature Tstg ð65 to +150 qC
ELECTRICAL CHARACTERISTICS (TA = 25 qC)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 0.1 PA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 0.1 PA
DC Current Gain hFE VCE = 1 V, IC = 250 PA, pulse 50 100 250
Gain Bandwidth Product fT VCE = 1 V, IC = 1 mA 4 GHz
Insertion Power Gain °S21e°
2
VCE = 1 V, IC = 1 mA, f = 1 GHz 4.0 6.5 dB
Maximum Available Gain MAG VCE = 1 V, IC = 1 mA, f = 1 GHz 12.5 dB
Noise Figure NF VCE = 1 V, IC = 250 PA, f = 1.0 GHz 3.0 4.5 dB
Associated Power Gain GA VCE = 1 V, IC = 250 PA, f = 1.0 GHz 3.5 dB
Collector Capacitance Cob
Note
VCB = 1 V, IE = 0, f = 1.0 MHz 0.4 0.6 pF
Note Measured using 3-pin bridge, with emitter pin connected to the bridge guard pin.
PACKAGE DIMENSIONS (in mm)
2.8 ± 0.2
2.9 ± 0.2
0 to 0.1
0.95
0.3
1.1 to 1.4
0.95
0.4
1.5
C
Marking
E
B
0.65
+0.1
–0.15
+0.1 –0.05
0.16
+0.1 –0.06
0.4
+0.1 –0.05
PIN CONNECTIONS
E: Emitter
B: Base
C: Collector
Marking: R62