Philips Semiconductors Product specification
Thyristor BT169W Series
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT
thyristor in a plastic envelope, suitable
for surface mounting, intended for use BT169 BW DW EW GW
in general purpose switching and V
DRM
, Repetitive peak 200 400 500 600 V
phase control applications. This V
RRM
off-state voltages
device is intended to be interfaced I
T(AV)
Average on-state 0.5 0.5 0.5 0.5 A
directly to microcontrollers, logic current
integrated circuits and other low I
T(RMS)
RMS on-state current 0.8 0.8 0.8 0.8 A
power gate trigger circuits. I
TSM
Non-repetitive peak 8888
on-state current
PINNING - SOT223 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
3 gate
tab anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BDEG
V
DRM
, V
RRM
Repetitive peak off-state - 200
1
400
1
500
1
600
1
V
voltages
I
T(AV)
Average on-state current half sine wave; - 0.63 A
T
sp
≤ 112 ˚C
I
T(RMS)
RMS on-state current all conduction angles - 1 A
I
TSM
Non-repetitive peak half sine wave;
on-state current T
j
= 25 ˚C prior to surge
t = 10 ms - 8 A
t = 8.3 ms - 9 A
I
2
tI
2
t for fusing t = 10 ms - 0.32 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 2 A; I
G
= 10 mA; - 50 A/µs
on-state current after dI
G
/dt = 100 mA/µs
triggering
I
GM
Peak gate current - 1 A
V
GM
Peak gate voltage - 5 V
V
RGM
Peak reverse gate voltage - 5 V
P
GM
Peak gate power - 2 W
P
G(AV)
Average gate power over any 20 ms period - 0.1 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
ak
g
4
123
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997 1 Rev 1.200