Power Transistors
201
2SC3611
Silicon NPN epitaxial planar type
For video amplifier
a73 Features
• High transition frequency f
T
• Small collector output capacitance C
ob
• Wide current range
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
a73 Absolute Maximum Ratings T
C
= 25°C
1 : Base
2 : Collector
3 : Emitter
TO-126B-A1 Package
Unit: mm
a73 Electrical Characteristics T
C
= 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
110 V
Collector to emitter voltage V
CER
100 V
V
CEO
50 V
Emitter to base voltage V
EBO
3.5 V
Peak collector current I
CP
300 mA
Collector current I
C
150 mA
Collector power
T
C
= 25°CP
C
1.2 W
dissipation
T
a
= 25°C 4.0
*
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current I
CEO
V
CE
= 35 V, I
B
= 0 10 µA
Collector to base voltage V
CBO
I
C
= 100 µA, I
E
= 0 110 V
Collector to emitter voltage V
CER
I
C
= 500 µA, R
BE
= 470 Ω 100 V
V
CEO
I
C
= 1 mA, I
B
= 0 50 V
Emitter to base voltage V
EBO
I
E
= 100 µA, I
C
= 0 3.5 V
Forward current transfer ratio h
FE
V
CE
= 5 V, I
C
= 100 mA 20
Collector to emitter saturation voltage V
CE(sat)
I
C
= 150 mA, I
B
= 15 mA 0.5 V
Transition frequency f
T1
V
CB
= 10 V, I
E
= −10 mA, f = 200 MHz 300 MHz
f
T2
V
CB
= 10 V, I
E
= −110 mA, f = 200 MHz 350 MHz
Collector output capacitance C
ob
V
CB
= 30 V, I
E
= 0, f = 1 MHz 3 pF
Note)
*
: With a 100 × 100 × 2 mm A1 heat sink
8.0
+0.5
–0.1
1.9
±0.1
3.05
±0.13.8
±0.3
11.0
±0.5
16.0
±1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1 1.76±0.1
123
φ 3.16±0.1