© 1996
DATA SHEET
Document No. P11673EJ1V0DS00 (1st edition)
Date Published August 1996 P
Printed in Japan
SILICON TRANSISTOR
2SC3587
The 2SC3587 is an NPN epitaxial transistor designed for low-
noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
FEATURES
• Low noise : NF = 1.7 dB TYP. @ f = 2 GHz
NF = 2.6 dB TYP. @ f = 4 GHz
• High power gain : GA = 12.5 dB TYP. @ f = 2 GHz
GA = 8.0 dB TYP. @ f = 4 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
PACKAGE DIMENSIONS (in mm)
3.8 MIN.
E
CB
E
45 °
0.5 ± 0.05
0.5
±
0.05
0.1
+0.06 -0.03
2.55 ± 0.2
2.1φ
3.8 MIN.
3.8 MIN.
3.8 MIN.
1.8 MAX.
0.55
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 35 mA
Total Power Dissipation PT (TC = 25 °C) 580 mW
Junction Temperature Tj 200 °C
Storage Temperature Tstg -65 to +150 °C
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 10 V 1.0 µA
Emitter Cut-off Current IEBO VEB = 1 V 1.0 µA
DC Current Gain hFE VCE = 6 V, IC = 10 mA Pulse 50 100 250
Gain Bandwidth Product fT VCE = 6 V, IC = 10 mA 10.0 GHz
Reverse Transfer Capacitance Cre VCB = 10 V, f = 1 MHz 0.2 0.7 pF
Noise Figure NF
Note
VCE = 6 V, IC = 5 mA f = 2 GHz 1.7 2.4 dB
f = 4 GHz 2.6 dB
Insertion Gain |S21e|
2
VCE = 6 V, IC = 10 mA f = 2 GHz 10.5 12.5 dB
f = 4 GHz 7.5 dB
Maximum Available Gain MAG VCE = 6 V, IC = 10 mA, f = 4 GHz 10 dB
Power Gain GA VCE = 6 V, IC = 5 mA f = 2 GHz 12.5 dB
f = 4 GHz 8.0 dB