2SC3583
器件描述：MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
器件厂商：NEC [NEC]
文件大小：103.74KB，共8页
Sponsor by e络盟器件资料摘要：
DATA SHEET
SILICON TRANSISTOR
2SC3583
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
Document No. P10360EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
1984©
DESCRIPTION
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
FEATURES
• NF 1.2 dB TYP. @f = 1.0 GHz
• Ga 13 dB TYP. @f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 G01C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 65 mA
Total Power Dissipation PT 200 mW
Junction Temperature Tj 150 G01C
Storage Temperature Tstg G0265 to +150 G01C
ELECTRICAL CHARACTERISTICS (TA = 25 G01C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 1.0 G01AVCB = 10 V, IE = 0
Emitter Cutoff Current IEBO 1.0 G01AVEB = 1 V, IE = 0
DC Current Gain hFE * 50 100 250 VCE = 8 V, IC = 20 mA
Gain Bandwidth Product fT 9 GHz VCE = 8 V, IC = 20 mA
Feed-Back Capacitance Cre ** 0.35 0.9 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain G01S21eG01
2
11 13 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Maximum Available Gain MAG 15 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Noise Figure NF 1.2 2.5 dB VCE = 8 V, IE = 7 mA, f = 1.0 GHz
* Pulse Measurement PW G03 350 G01s, Duty Cycle G03 2 %
** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Class R33/Q * R34/R * R35/S *
Marking R33 R34 R35
hFE 50 to 100 80 to 160 125 to 250 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
2.9±0.2
1.1 to 1.4
0 to 0.1
0.95
0.3
0.95
0.4
+0.1 −
0.05
0.4
+0.1 −
0.05
0.16
+0.1 −
0.06
0.65
+0.1
−0.15
SILICON TRANSISTOR
2SC3583
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
Document No. P10360EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
1984©
DESCRIPTION
The 2SC3583 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
FEATURES
• NF 1.2 dB TYP. @f = 1.0 GHz
• Ga 13 dB TYP. @f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 G01C)
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 65 mA
Total Power Dissipation PT 200 mW
Junction Temperature Tj 150 G01C
Storage Temperature Tstg G0265 to +150 G01C
ELECTRICAL CHARACTERISTICS (TA = 25 G01C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 1.0 G01AVCB = 10 V, IE = 0
Emitter Cutoff Current IEBO 1.0 G01AVEB = 1 V, IE = 0
DC Current Gain hFE * 50 100 250 VCE = 8 V, IC = 20 mA
Gain Bandwidth Product fT 9 GHz VCE = 8 V, IC = 20 mA
Feed-Back Capacitance Cre ** 0.35 0.9 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain G01S21eG01
2
11 13 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Maximum Available Gain MAG 15 dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Noise Figure NF 1.2 2.5 dB VCE = 8 V, IE = 7 mA, f = 1.0 GHz
* Pulse Measurement PW G03 350 G01s, Duty Cycle G03 2 %
** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Class R33/Q * R34/R * R35/S *
Marking R33 R34 R35
hFE 50 to 100 80 to 160 125 to 250 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNECTIONS
1.
2.
3.
Emitter
Base
Collector
2.8±0.2
2.9±0.2
1.1 to 1.4
0 to 0.1
0.95
0.3
0.95
0.4
+0.1 −
0.05
0.4
+0.1 −
0.05
0.16
+0.1 −
0.06
0.65
+0.1
−0.15