1
Transistor
2SC3526(H)
Silicon NPN epitaxial planer type
For display video output
n
Features
l High transition frequency f
T
.
l Small collector output capacitance C
ob
.
l Wide current range.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
5.9– 0.2
2.54– 0.15
0.7– 0.1
4.9– 0.2
8.6
–
0.2
0.7
+0.3 –0.2
13.5
–
0.5
3.2
0.45
+0.2
–0.1
1.271.27
0.45
+0.2
–0.1
132
Symbol
V
CBO
V
CER
*
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
110
100
50
3.5
300
150
1.0
150
–55 ~ +150
Unit
V
V
V
V
mA
mA
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CEO
V
CBO
V
CER
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T1
f
T2
C
ob
Conditions
V
CE
= 35V, I
B
= 0
I
C
= 100m A, I
E
= 0
I
C
= 500m A, R
BE
= 470W
I
C
= 1mA, I
B
= 0
I
E
= 100m A, I
C
= 0
V
CE
= 5V, I
C
= 100mA
*
I
C
= 150mA, I
B
= 15mA
*
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= –110mA, f = 200MHz
V
CB
= 30V, I
E
= 0, f = 1MHz
min
110
100
50
3.5
20
typ
300
350
3
max
10
0.5
Unit
m A
V
V
V
V
V
MHz
MHz
pF
*
R
EB
= 470W
*
Pulse measurement