COMSET SEMICONDUCTORS 1/2
BDX20
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
CBO
Collector to Base Voltage -60 V
V
CEO
#Collector-Emitter Voltage -140 V
V
CEX
Collector-Emitter Voltage V
BE
=1.5 V -160 V
V
EBO
Emitter-Base Voltage -7 V
I
C
Collector Current – Continuous -10 A
I
B
Base Current – Continuous -7 A
P
TOT
Total Device Dissipation 117 Watts
T
J
Junction Temperature 200 °C
T
S
Storage Temperature
-65 to
+200
°C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
R
thJC
Thermal Resistance, Junction to Case 1.5 °C/W
PNP SILICON TRANSISTORS EPITAXIAL BASE
LF Large Signal Power Amplification
High Current Fast Switching
Thermal Fatigue Inspection