COMSET SEMICONDUCTORS 1/3
LF Large Signal Power Amplification
High Current Switching
Suitable for :
Series and shunt regulators
High Fidelity Amplifiers
Power-switching circuits
PNP SILICON TRANSISTOR EPITAXIAL BASE
BDX18 – BDX18N
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
V
CEO
Collector-Emitter Voltage
BDX18
BDX18N
-60 V
-70
V
CER
Collector-Emitter Voltage R
BE
=100Ω
BDX18
BDX18N
-65
V
V
EBO
Collector-Emitter Voltage
BDX18
BDX18N
-7 V
-100
V
CBO
Emitter-Base Voltage
BDX18
BDX18N
-70
V
-90
V
CEX
Collector-Emitter Voltage V
BE
=+1.5 V
BDX18
BDX18N
-70
V
I
C
Collector Current
BDX18
BDX18N
-15 A
I
B
Base Current
BDX18
BDX18N
-7 A
P
T
Power Dissipation @ T
C
= 25°
BDX18
BDX18N
117 Watts
T
J
Junction Temperature
T
S
Storage Temperature
BDX18
BDX18N
-65 to +200 °C