1
Transistor
2SC3354
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
n
Features
l Optimum for high-density mounting.
l Allowing supply with the radial taping.
l High transition frequency f
T
.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
4.0– 0.2
marking
2.54– 0.15
1.271.27
3.0
–
0.2
15.6
–
0.5
2.0
–
0.2
0.7
–
0.1
0.45
–
0.1
123
+0.2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
3
50
300
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Common base reverse transfer capacitance
Common emitter reverse transfer capacitance
Transition frequency
Power gain
Symbol
V
CBO
V
EBO
h
FE
V
BE
C
rb
C
re
f
T
*
PG
Conditions
I
C
= 100m A, I
E
= 0
I
E
= 10m A, I
C
= 0
V
CB
= 10V, I
E
= –2mA
V
CB
= 10V, I
E
= –2mA
V
CE
= 6V, I
C
= 0, f = 1MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= –15mA, f = 200MHz
V
CB
= 10V, I
E
= –1mA, f = 100MHz
min
30
3
25
600
typ
720
0.8
1
1200
17
max
250
1.5
1600
Unit
V
V
mV
pF
pF
MHz
dB
*
h
FE
Rank classification
Rank T S
f
T
(MHz) 600 ~ 1300 900 ~ 1600