1
Transistor
2SC3315
Silicon NPN epitaxial planer type
For high-frequency amplification
n
Features
l Optimum for high-density mounting.
l Allowing supply with the radial taping.
l Optimum for RF amplification of FM/AM radios.
l High transition frequency f
T
.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector EIAJ:SC–72
3:Base New S Type Package
4.0– 0.2
marking
2.54– 0.15
1.271.27
3.0
–
0.2
15.6
–
0.5
2.0
–
0.2
0.7
–
0.1
0.45
–
0.1
123
+0.2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
3
15
300
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Common emitter reverse transfer capacitance
Transition frequency
Noise figure
Power gain
Symbol
V
CBO
V
EBO
h
FE
*
V
BE
C
re
f
T
NF
PG
Conditions
I
C
= 10m A, I
E
= 0
I
E
= 10m A, I
C
= 0
V
CB
= 6V, I
E
= –1mA
V
CB
= 6V, I
E
= –1mA
V
CE
= 6V, I
C
= 1mA, f = 10.7MHz
V
CB
= 6V, I
E
= –1mA, f = 200MHz
V
CB
= 6V, I
E
= –1mA, f = 100MHz
V
CB
= 6V, I
E
= –1mA, f = 100MHz
min
30
3
65
450
20
typ
720
0.8
650
3.3
24
max
260
1.0
5.0
Unit
V
V
mV
pF
MHz
dB
dB
*
h
FE
Rank classification
Rank C D
h
FE
65 ~ 160 100 ~ 260