63
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1294)
Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC3263
230
230
5
15
4
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
n Absolute maximum ratings n Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SC3263
100max
100max
230min
50min*
2.0max
60typ
250typ
Unit
m A
m A
V
V
MHz
pF
Conditions
VCB=230V
VEB=5V
IC=25mA
VCE=4V, IC=5A
IC=5A, IB=0.5A
VCE=12V, IE=–2A
VCB=10V, f=1MHz
LAPT 2SC3263
(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) hFE–IC Temperature Characteristics (Typical) θ j-a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat)–IB Characteristics (Typical)
Pc–Ta Derating
Safe Operating Area (Single Pulse)fT–IE Characteristics (Typical)
0
3
2
1
0 0.5 1.0 2.01.5
Base Current IB(A)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
IC=10A
5A
0
15
10
5
021
Base-Emittor Voltage VBE(V)
Collector Current I
C
(A)
(VCE=4V)
125˚C (Case Temp)
–30˚C (Case Temp)
25˚C (Case Temp)
0.1
1
3
0.5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance
θ
j-a
(˚C/W)
130
100
50
3.5
0
Ambient Temperature Ta(˚C)
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
0 25 50 75 100 125 1503 10 100 300
0.1
1
0.5
10
40
5
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
10ms
DC
Without Heatsink
Natural Cooling
0.02 0.1 10.5 10515
10
50
100
200
Collector Current IC(A)
DC Current Gain h
FE
(VCE=4V)
Typ
0
0
5
15
10
2134
Collector-Emitter Voltage VCE(V)
Collector Current I
C
(A)
1.0A1.5A2.0A
3.0A
600mA
400mA
200mA
100mA
50mA
IB=20mA
(VCE=4V)
Collector Current IC(A)
0.02 0.5 1 5 100.1 15
DC Current Gain h
FE
10
50
100
200
125˚C
25˚C
–30˚C
–0.02 –0.1 –1 –10
0
20
40
60
100
80
Cut-off Frequency f
T
(MH
Z
)
(VCE=12V)
Emitter Current IE(A)
Typ
n Typical Switching Characteristics (Common Emitter)
VCC
(V)
60
RL
(Ω)
12
IC
(A)
5
VBB2
(V)
–5
IB2
(mA)
–500
ton
(m s)
0.30typ
tstg
(m s)
2.40typ
tf
(m s)
0.50typ
IB1
(mA)
500
VBB1
(V)
10
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9
±0.3
4.0
2.0
5.0
±0.2
1.8
ø3.2±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45±0.1 5.45±0.1
C
4.8±0.2
0.65
+0.2
-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
* hFE Rank O(50 to 100), Y(70 to 140)