JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92MOD Plastic-Encapsulate Transistors


2SC3243 TRANSISTOR (NPN)

FEATURES
Power dissipation
P
CM
: 0.9 W (Tamb=25℃)
Collector current
I
CM
: 1 A
Collector-base voltage
V
(BR)CBO
: 60 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=10µA, I
E
=0 60 V
Collector-emitter breakdown voltage V(BR)CEO Ic=2mA, I
B
=0 60 V
Emitter-base breakdown voltage V(BR)EBO I
E
=10µA, I
C
=0 6 V
Collector cut-off current ICBO V
CB
=50V, I
E
=0 0.2 µA
Emitter cut-off current IEBO V
EB
=4V, I
C
=0 0.2 µA
DC current gain hFE(1) V
CE
=4V, I
C
=100mA 55 300
Collector-emitter saturation voltage VCE(sat) I
C
=500mA, I
B
=25mA 0.3 V
Transition frequency f
T
V
CE
=2V, I
C
=10mA 80 MHz
Collector output capacitance Cob V
CB
=10V, I
E
=0, f=1MHz 25 pF



CLASSIFICATION OF h
FE(1)

Rank C D E
Range
55-110 90-180 150-300
Marking



TO-92MOD

1. EMITTER

2. COLLECTOR

3. BASE


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