1
Transistor
2SC3130
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
n
Features
l High transition frequency f
T
.
l Small collector output capacitance C
ob
and common base reverse
transfer capacitance C
rb
.
l Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65– 0.15 0.65– 0.15
3
1
2
0.95
0.95
1.9
–
0.2
0.4
+0.1 –0.05
1.1
+0.2 –0.1
0.8
0.4– 0.2
0 to 0.1
0.16
+0.1 –0.06
1.45
0.1 to 0.3
2.9
+0.2 –0.05
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
10
3
50
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Base time constant
Common emitter reverse transfer capacitance
h
FE
ratio
Symbol
I
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
r
bb
' · C
C
C
rb
D h
FE
Conditions
V
CB
= 10V, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 4V, I
C
= 5mA
I
C
= 20mA, I
B
= 4mA
V
CB
= 4V, I
E
= –5mA, f = 200MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CB
= 4V, I
E
= –5mA, f = 31.9MHz
V
CB
= 4V, I
E
= 0, f = 1MHz
V
CE
= 4V, I
C
= 100m A
V
CE
= 4V, I
C
= 5mA
min
10
3
75
1.4
0.75
typ
200
1.9
1.4
11
0.45
max
1
400
0.5
2.5
1.6
Unit
m A
V
V
V
GHz
pF
ps
pF
Marking symbol : 1S
*
h
FE
Rank classification
Rank P Q R
h
FE
75 ~ 130 110 ~ 220 200 ~ 400
Marking Symbol 1SP 1SQ 1SR