BC214L
器件描述：PNP General Purpose Amplifier
器件厂商：FAIRCHILD [Fairchild Semiconductor]
文件大小：27.98KB，共4页
Sponsor by e络盟器件资料摘要：
©2003 Fairchild Semiconductor Corporation Rev. A, October 2003
BC214L
Absolute Maximum Ratings* T
a
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage -30 V
V
CBO
Collector-Base Voltage -45 V
V
EBO
Emitter-Base Voltage -5.0 V
I
C
Collector Current (DC)- - Continuous -500 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Voltage I
C
= -2mA, I
B
= 0 -30 V
V
(BR)CBO
Collector-Base Voltage I
C
= -10µA, I
E
= 0 -45 V
V
(BR)EBO
Emitter-Base Voltage I
E
= -10µA, I
C
= 0 -5.0 V
I
CBO
Collector Cut-off Current V
CB
= -30V, I
E
= 0 -15 nA
I
EBO
Emitter Cut-off Current V
EB
= -4V, I
C
= 0 -15 nA
On Characteristics *
h
FE
DC Current Gain V
CE
= -5V, I
C
= -10µA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -100mA
100
140
120
400
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
-0.25
-0.6
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -100mA, I
B
= -5mA -1.1 V
V
BE
(on) Base-Emitter On Voltage V
CE
= -5V, I
C
= -2mA -0.6 -0.72 V
Small Signal Characteristics
f
T
Current gain Bandwidth Product V
CE
= -5V, I
C
= -10mA
f = 100MHz
200 MHz
NF Noise Figure V
CE
= -5V, I
C
= -200µA
R
G
= 2kΩ, f = 15.7KHz
2.0 dB
h
fe
Small Signal Current Gain I
C
= -2mA, V
CE
= -5V
f = 1KHz
140
C
OB
Output Capacitance V
CB
= -10V, f = 1MHz 10 pF
BC214L
PNP General Purpose Amplifier
This device is deisgned for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
Sourced from process 68.
1. Emitter 2. Collector 3. Base
TO-92
1
BC214L
Absolute Maximum Ratings* T
a
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Electrical Characteristics T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage -30 V
V
CBO
Collector-Base Voltage -45 V
V
EBO
Emitter-Base Voltage -5.0 V
I
C
Collector Current (DC)- - Continuous -500 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Voltage I
C
= -2mA, I
B
= 0 -30 V
V
(BR)CBO
Collector-Base Voltage I
C
= -10µA, I
E
= 0 -45 V
V
(BR)EBO
Emitter-Base Voltage I
E
= -10µA, I
C
= 0 -5.0 V
I
CBO
Collector Cut-off Current V
CB
= -30V, I
E
= 0 -15 nA
I
EBO
Emitter Cut-off Current V
EB
= -4V, I
C
= 0 -15 nA
On Characteristics *
h
FE
DC Current Gain V
CE
= -5V, I
C
= -10µA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -100mA
100
140
120
400
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
-0.25
-0.6
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -100mA, I
B
= -5mA -1.1 V
V
BE
(on) Base-Emitter On Voltage V
CE
= -5V, I
C
= -2mA -0.6 -0.72 V
Small Signal Characteristics
f
T
Current gain Bandwidth Product V
CE
= -5V, I
C
= -10mA
f = 100MHz
200 MHz
NF Noise Figure V
CE
= -5V, I
C
= -200µA
R
G
= 2kΩ, f = 15.7KHz
2.0 dB
h
fe
Small Signal Current Gain I
C
= -2mA, V
CE
= -5V
f = 1KHz
140
C
OB
Output Capacitance V
CB
= -10V, f = 1MHz 10 pF
BC214L
PNP General Purpose Amplifier
This device is deisgned for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
Sourced from process 68.
1. Emitter 2. Collector 3. Base
TO-92
1