Power Transistors
193
2SC3063
Silicon NPN triple diffusion planar type
For TV video output amplification
a73 Features
• High collector to emitter voltage V
CEO
• Small collector output capacitance C
ob
• TO-126B package which requires no insulation plate for installa-
tion to the heat sink
a73 Absolute Maximum Ratings T
C
= 25°C
1 : Emitter
2 : Collector
3 : Base
TO-126B-A1 Package
Unit: mm
a73 Electrical Characteristics T
C
= 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
300 V
Collector to emitter voltage V
CEO
300 V
Emitter to base voltage V
EBO
7V
Peak collector current I
CP
200 mA
Collector current I
C
100 mA
Collector power dissipation P
C
1.2 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector to base voltage V
CBO
I
C
= 10 µA, I
E
= 0 300 V
Collector to emitter voltage V
CEO
I
C
= 0.1 mA, I
B
= 0 300 V
Emitter to base voltage V
EBO
I
E
= 10 µA, I
C
= 0 7 V
Forward current transfer ratio h
FE
V
CE
= 50 V, I
C
= 5 mA 50 250
Base to emitter voltage V
BE
V
CE
= 10 V, I
C
= 30 mA 1.2 V
Collector to emitter saturation voltage V
CE(sat)
I
C
= 30 mA, I
B
= 3 mA 1.5 V
Transition frequency f
T
V
CB
= 30 V, I
E
= −20 mA, f = 200 MHz 70 140 MHz
Collector output capacitance C
ob
V
CB
= 30 V, I
E
= 0, f = 1 MHz 2.4 pF
8.0
+0.5
–0.1
1.9
±0.1
3.05
±0.13.8
±0.3
11.0
±0.5
16.0
±1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1 1.76±0.1
123
φ 3.16±0.1