GENERAL DESCRIPTION
High frequency, high power transistors in a plastic
envelope, primarily for use in audio and general
purpose
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
VCBO
Collector-emitter voltage peak value VBE = 0V
-
180 V
VCEO
Collector-emitter voltage (open base)
-
180 V
IC
Collector current (DC)
-
17 A
ICM
Collector current peak value
-
A
Ptot
Total power dissipation Tmb 25
-
200 W
VCEsat
Collector-emitter saturation voltage IC = 8.0A; IB = 0.8A
-
3V
VF
Diode forward voltage IF = 8.0A 1.5 2.0 V
tf
Fall time IC=8A,IB1=-IB2=1A,VCC=40V 0.45 1.0 s
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM
Collector-emitter voltage peak value VBE = 0V - 180 V
VCEO
Collector-emitter voltage (open base) - 180 V
VEBO
Emitter-base oltage (open colloctor) 5 V
IC
Collector current (DC) - 17 A
IB
Base current (DC) - 5 A
Ptot
Total power dissipation Tmb 25 -20 W
Tstg
Storage temperature -55 150
Tj
Junction temperature - 150
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
ICBO
Collector-base cut-off current VCB=180V - 0.2 mA
IEBO
Emitter-base cut-off current VEB=5V - 0.2 mA
V(BR)CEO
Collector-emitter breakdown voltage IC=1mA 180
VCEsat
Collector-emitter saturation voltages IC = 8A; IB = 0.8A - 2 V
hFE
DC current gain IC = 2A; VCE = 5V 50 200
fT
Transition frequency at f = 5MHz IC = 2A; VCE = 12V 10 - MHz
Cc
Collector capacitance at f = 1MHz VCB = 10V,f=1MHZ 250 - pF
ton
On times IC=8A.IB1=-IB2=1A,VCC=40V 0.2 us
ts
Tum-off storage time IC=8A.IB1=-IB2=1A,VCC=40V 1.5 us
tf
Fall time IC=8A.IB1=-IB2=1A,VCC=40V 0.45 1.0 us
ELECTRICAL CHARACTERISTICS
MT-200
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com