DATA SHEET
SILICON TRANSISTOR
2SC2954
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
Document No. P10405EJ3V0DS00 (3rd edition)
(Previous No. TC-1458A)
Date Published March 1997 N
Printed in Japan 1994©
DESCRIPTION
The 2SC2954 is an NPN epitaxial silicon transistor disigned for
low noise wide band amplifier and buffer amplifier of OSC, for VHF
and CATV bnad.
FEATURES
• Low Noise and High Gain.
f = 200 MHz, 500 MHz
NF: 2.3 dB, 2.4 dB
G01S21eG01: 20 dB, 12.5 dB
• Large PT in Small Package.
PT: 2 W with 16 cm
2
G02 0.7 mm Ceramic Substrate.
ABSOLUTE MAXIMUM RATINGS (TA = 25 G01C)
Collector to Base Voltage VCBO 35 V
Collector to Emitter Voltage VCEO 18 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 150 mA
Total Power Dissipation PT* 2.0 W
Termal Resistance Rth(j-a)* 62.5 G03C/W
Junction Temperature Tj 150 G03C
Storage Temperature Tstg G0465 to +150 G03C
* With 16 cm
2
G02 0.7 mm
Ceramic Substrate
PACKAGE DIMENSIONS
(Unit: mm)
Term, Connection
E
C
B
(SOT-89)
: Emitter
: Collector (Fin)
: Base
0.41
−0.03
+0.05
0.47
±0.06
0.42±0.06
4.5±0.1
1.6±0.2
3.0
EB
C
1.5
0.8 MIN.
2.5±0.1
4.0±0.25
1.5±0.1
0.42
±0.06