2SC2899
器件描述：Silicon NPN Triple Diffused
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：38.3KB，共7页
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2SC2899
Silicon NPN Triple Diffused
Application
High speed and high voltage switching
Outline
1. Emitter
2. Collector
3. Base
TO-126 MOD
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
500 V
Collector to emitter voltage V
CEO
400 V
Emitter to base voltage V
EBO
10 V
Collector current I
C
0.5 A
Collector peak current I
C(peak)
1.0 A
Collector power dissipation P
C
0.75 W
P
C
*
1
10 W
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Note: 1. Value at T
C
= 25 C.
Silicon NPN Triple Diffused
Application
High speed and high voltage switching
Outline
1. Emitter
2. Collector
3. Base
TO-126 MOD
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
500 V
Collector to emitter voltage V
CEO
400 V
Emitter to base voltage V
EBO
10 V
Collector current I
C
0.5 A
Collector peak current I
C(peak)
1.0 A
Collector power dissipation P
C
0.75 W
P
C
*
1
10 W
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Note: 1. Value at T
C
= 25 C.