1
Transistor
2SC2671(F)
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
n
Features
l Low noise figure NF.
l High gain.
l High transition frequency f
T
.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
JEDEC:TO–92
EIAJ:SC–43A
5.0– 0.2 4.0– 0.2
5.1
–
0.2
13.5
–
0.5
0.45
+0.2
–0.10.45
+0.2
–0.1
1.27 1.27
2.3
–
0.2
2.54– 0.15
213
Symbol
V
CBO
V
CER
*
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
14
2
80
600
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
Second inter modulation distortion
Third inter modulation distortion
Symbol
I
CBO
I
EBO
h
FE
f
T
*
C
ob
*
| S
21e
|
2
GUM
*
NF
*
IM
2
*
IM
3
*
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 8V, I
C
= 40mA
V
CE
= 8V, I
C
= 40mA, f = 800MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 8V, I
C
= 40mA, f = 800MHz
V
CE
= 8V, I
C
= 40mA, f = 800MHz
V
CE
= 8V, I
C
= 40mA, f = 800MHz
V
CE
= 8V, I
C
= 40mA, f
1
= 200MHz
f
2
= 500MHz, V
O
= 100dBm /75W
V
CE
= 8V, I
C
= 40mA, f
1
= 600MHz
f
2
= 500MHz, V
O
= 100dBm /75W
min
50
3.5
9
10
50
75
typ
150
5.5
0.8
12
13
2.0
60
86
max
1
1
300
1.5
15
3.2
Unit
m A
m A
GHz
pF
dB
dB
dB
dB
dB
*
REB = 1kW
*
LTPD = 10%