1
Transistor
2SC2636
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation
n
Features
l High transition frequency f
T
.
l M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
6.9– 0.1
0.55– 0.1 0.45– 0.05
1.0
–
0.1
1.0
2.5– 0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
–
0.1
2.0
–
0.2
2.4
–
0.2
1.25
–
0.05
4.1
–
0.2
4
.5
–
0.1
2.5 2.5
123
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
3
50
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency
Power gain
Common base reverse transfer capacitance
Common emitter reverse transfer capacitance
Base time constant
Symbol
V
CBO
V
EBO
h
FE
V
BE
f
T
*
PG
C
rb
C
re
r
bb
' · C
C
Conditions
I
C
= 100m A, I
E
= 0
I
E
= 10m A, I
C
= 0
V
CB
= 10V, I
E
= –2mA
V
CB
= 10V, I
E
= –2mA
V
CB
= 10V, I
E
= –15mA, f = 200MHz
V
CB
= 10V, I
E
= –1mA, f = 100MHz
V
CB
= 6V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= –10mA, f = 31.9MHz
min
30
3
25
600
typ
720
1200
20
0.8
max
1600
1.5
25
Unit
V
V
mV
MHz
dB
pF
pF
ps
*
f
T
Rank classification
Rank T S
f
T
600 ~ 1300 900 ~ 1600