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2SC2613

器件描述:Silicon NPN Triple Diffused
器件厂商:HITACHI [Hitachi Semiconductor]
文件大小:39.6KB,共7页
Sponsor by e络盟
器件资料摘要:
2SC2613
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
500 V
Collector to emitter voltage V
CEO
400 V
Emitter to base voltage V
EBO
7V
Collector current I
C
5A
Collector peak current I
C(peak)
10 A
Base current I
B
2.5 A
Collector power dissipation P
C
*
1
40 W
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Note: 1. Value at T
C
= 25 C.