2SC2570A-T
器件描述：HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
器件厂商：NEC [NEC]
文件大小：119.68KB，共8页
Sponsor by e络盟器件资料摘要：
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
NPN SILICON TRANSISTOR
2SC2570A
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
Document No. P10404EJ3V0DS00 (3rd edition)
Date Published November 1999 N CP(K)
Printed in Japan
DATA SHEET
© 1980, 1999
DESCRIPTION
The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.
FEATURES
• Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA
• Wide dynamic range : NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 15 mA
ORDERING INFORMATION
Part Number Quantity
2SC2570A Loose products (500 pcs)
2SC2570A-T Taping products (Box type) (2 500 pcs)
Remark To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 25 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 70 mA
Total Power Dissipation Ptot 600 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg –65 to +150 °C
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
NPN SILICON TRANSISTOR
2SC2570A
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
Document No. P10404EJ3V0DS00 (3rd edition)
Date Published November 1999 N CP(K)
Printed in Japan
DATA SHEET
© 1980, 1999
DESCRIPTION
The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.
FEATURES
• Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA
• Wide dynamic range : NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 15 mA
ORDERING INFORMATION
Part Number Quantity
2SC2570A Loose products (500 pcs)
2SC2570A-T Taping products (Box type) (2 500 pcs)
Remark To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 25 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 70 mA
Total Power Dissipation Ptot 600 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg –65 to +150 °C