Transistors
1
2SC2480
Silicon NPN epitaxial planer type
For high-frequency amplification / oscillation / mixing
a73 Features
• High transition frequency f
T
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
a73 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector to base voltage V
CBO
30 V
Collector to emitter voltage V
CEO
20 V
Emitter to base voltage V
EBO
3V
Collector current I
C
50 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector to base voltage V
CBO
I
C
= 100 µA, I
E
= 030 V
Emitter to base voltage V
EBO
I
E
= 10 µA, I
C
=
Forward current transfer ratio h
FE
V
CB
= 10 V, I
E
= −2 mA 25 250
Base to emitter voltage V
BE
V
CB
= 10 V, I
E
= −2 mA 720 mV
Transition frequency
*
f
T
V
CB
= 10 V, I
E
= −15 mA, f = 200 MHz 800 1 300 1 600 MHz
Common emitter reverse transfer
C
re
V
CB
= 10 V, I
E
= −1 mA, f = 10.7 MHz 1 1.5 pF
capacitance
C
rb
V
CE
= 6 V, I
C
= 0, f = 1 MHz 0.8 pF
Power gain PG V
CB
= 10 V, I
E
= −1 mA, f = 200 MHz 20 dB
a73 Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol: R
Note)
*
: Rank classification
Rank T S No-rank
f
T
(MHz) 800 to 1 400 1 000 to 1 600 800 to 1 600
Marking symbol RT RS R
Unit: mm
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
21
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5
°
10°
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1: Base JEDEC: TO-236
2: Emitter EIAJ: SC-59
3: Collector Mini Type Package
Product of no-rank is not classified and have no indication for rank.