1
Transistor
2SC2377
Silicon NPN epitaxial planer type
For high-frequency amplification
n
Features
l Optimum for RF amplification of FM/AM radios.
l High transition frequency f
T
.
l M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
6.9– 0.1
0.55– 0.1 0.45– 0.05
1.0
–
0.1
1.0
2.5– 0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
–
0.1
2.0
–
0.2
2.4
–
0.2
1.25
–
0.05
4.1
–
0.2
4
.5
–
0.1
2.5 2.5
123
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
3
15
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Transition frequency
Noise figure
Power gain
Common emitter reverse transfer capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE
*
V
BE
f
T
NF
PG
C
re
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 20V, I
B
= 0
V
EB
= 3V, I
C
= 0
V
CB
= 6V, I
E
= –1mA
V
CB
= 6V, I
E
= –1mA
V
CB
= 6V, I
E
= –1mA, f = 100MHz
V
CB
= 6V, I
E
= –1mA
V
CB
= 6V, I
E
= –1mA
V
CE
= 6V, I
C
= 1mA
min
65
450
20
typ
720
650
3.3
24
0.8
max
100
10
1
260
5
1
*
h
FE
Rank classification
Rank C D
h
FE
65 ~ 160 100 ~ 260
Unit
nA
m A
m A
mV
MHz
dB
dB
pF