1
Transistor
2SC2188
Silicon NPN epitaxial planer type
For intermediate frequency amplification of TV image
n
Features
l High transition frequency f
T
.
l Satisfactory linearity of forward current transfer ratio h
FE
.
l M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
6.9– 0.1
0.55– 0.1 0.45– 0.05
1.0
–
0.1
1.0
2.5– 0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
–
0.1
2.0
–
0.2
2.4
–
0.2
1.25
–
0.05
4.1
–
0.2
4
.5
–
0.1
2.5 2.5
123
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
45
35
4
50
600
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
Power gain
Symbol
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
re
PG
Conditions
V
CE
= 20V, I
B
= 0
I
C
= 10m A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CB
= 10V, I
E
= –10mA
I
C
= 20mA, I
B
= 2mA
V
CB
= 10V, I
E
= –10mA, f = 100MHz
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= –10mA, f = 58MHz
min
45
35
4
20
300
typ
50
500
18
max
10
100
0.5
1.5
Unit
m A
V
V
V
V
MHz
pF
dB