Power Transistors
1
Publication date: January 2003 SJD00097BED
2SC2209
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SA0963
■ Features
• Large collector power dissipation P
C
• Output of 5 W can be obtained by a complementary pair with
2SA0963
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
1: Pulse measurement
*
2: Rank classification
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 1 mA, I
E
= 050V
Collector-emitter voltage (Base open) V
CEO
I
C
= 2 mA, I
B
= 04
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= 20 V, I
E
= 01µA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= 10 V, I
B
= 0 100 µA
Emitter-base cutoff current (Collector open) I
EBO
V
EB
= 5 V, I
C
= 0µA
Forward current transfer ratio
*
1, 2
h
FE
V
CE
= 5 V, I
C
= 1 A 80 220 
Collector-emitter saturation voltage V
CE(sat)
I
C
= 1.5 A, I
B
= 0.15 A 1 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 2 A, I
B
= 0.2 A 1.5 V
Transition frequency f
T
V
CB
= 5 V, I
E
= − 0.5 A, f = 200 MHz 150 MHz
Collector output capacitance C
ob
V
CB
= 5 V, I
E
= 0, f = 1 MHz 50 pF
(Common base, input open circuited)
1: Emitter
2: Collector
3: Base
TO-126A-A1 Package
7.5
+0.5
–0.1
2.3
±
0.2
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
2.9±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1 1.26±0.1
123
120°
Rank Q R
h
FE
80 to 160 120 to 220
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
50 V
Collector-emitter voltage (Base open) V
CEO
40 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
1.5 A
Peak collector current I
CP
3A
Collector power dissipation
*
P
C
10 W
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note)
*
: T
C
= 25°C