2SC1815(L)
2003-03-27 1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1815(L)

Audio Frequency Voltage Amplifier Applications
Low Noise Amplifier Applications


Gb7G20 High breakdown voltage, high current capability
: V
CEO
= 50 V (min), I
C
= 150 mA (max)
Gb7G20 Excellent linearity of h
FE

: h
FE (2)
= 100 (typ.) at V
CE
= 6 V, I
C
= 150 mA
: h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
Gb7G20 Low noise: NF = 0.2dB (typ.) (f = 1 kHz).
Gb7G20 Complementary to 2SA1015 (L). (O, Y, GR class).

Maximum Ratings (Ta G3d 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
60 V
Collector-emitter voltage V
CEO
50 V
Emitter-base voltage V
EBO
5 V
Collector current I
C
150 mA
Base current I
B
50 mA
Collector power dissipation P
C
400 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
G2d55~125 °C

Electrical Characteristics (Ta G3d 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
G3d 60 V, I
E
G3d 0 GbeG20 Gbe 0.1 G6dA
Emitter cut-off current I
EBO
V
EB
G3d 5 V, I
C
G3d 0 Gbe Gbe 0.1 G6dA
h
FE (1)

(Note)
V
CE
G3d 6 V, I
C
G3d 2 mA 70 Gbe 700
DC current gain
h
FE (2)
V
CE
G3d 6 V, I
C
G3d 150 mA 25 100 Gbe

Collector-emitter V
CE (sat)
I
C
G3d 100 mA, I
B
G3d 10 mA Gbe 0.1 0.25
Saturation voltage
Base-emitter V
BE (sat)
I
C
G3d 100 mA, I
B
G3d 10 mA Gbe Gbe 1.0
V
Transition frequency f
T
V
CE
G3d 10 V, I
C
G3d 1 mA 80 Gbe Gbe MHz
Collector output capacitance C
ob
V
CB
G3d 10 V, I
E
G3d 0, f G3d 1 MHz Gbe 2.0 3.5 pF
Base intrinsic resistance r
bb’
V
CE
G3d 10 V, I
E
G3d G2d1 mA, f G3d 30 MHz Gbe 50 Gbe G57
NF (1)
V
CE
G3d 6 V, I
C
G3d 0.1 mA
R
G
G3d 10 kG57G2cG20f G3d 100 Hz
Gbe 0.5 6
Noise figure
NF (2)
V
CE
G3d 6 V, I
C
G3d 0.1 mA
R
G
G3d 10 kG57G2cG20f G3d 1 kHz
Gbe 0.2 3
dB
Note: h
FE (1)
classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700

Unit: mm



JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)