2SC1881
器件描述：Silicon NPN Triple Diffused
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：35.77KB，共6页
Sponsor by e络盟器件资料摘要：
2SC1881(K)
Silicon NPN Triple Diffused
Application
High gain amplifier power switching
Outline
TO-220AB
6.8 kΩ
(Typ)
400 Ω
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
60 V
Collector to emitter voltage V
CEO
60 V
Emitter to base voltage V
EBO
7V
Collector current I
C
3A
Collector peak current I
C(peak)
6A
Collector power dissipation P
C
*
1
30 W
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Note: 1. Value at T
C
= 25 C.
Silicon NPN Triple Diffused
Application
High gain amplifier power switching
Outline
TO-220AB
6.8 kΩ
(Typ)
400 Ω
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
60 V
Collector to emitter voltage V
CEO
60 V
Emitter to base voltage V
EBO
7V
Collector current I
C
3A
Collector peak current I
C(peak)
6A
Collector power dissipation P
C
*
1
30 W
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Note: 1. Value at T
C
= 25 C.