SILICON TRANSISTOR
2SC1623
FEATURES
• High DC Current Gain: hFE = 200 TYP.
(VCE = 6.0 V, IC = 1.0 mA)
• High Voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Current (TA = 25 ˚C)
Collector to Base Voltage VCBO 60 V
Collector to Emitter Voltage VCEO 50 V
Emitter to Base Voltage VEBO 5.0 V
Collector Current (DC) IC 100 mA
Maximum Power Dissipation
Total Power Dissipation
at 25 ˚C Ambient Temperature PT 200 mW
Maximum Temperatures
Junction Temperature Tj 150 ˚C
Storage Temperature Range Tstg –55 to +150 ˚C
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
PACKAGE DIMENSIONS
in millimeters
© 1984
DATA SHEET
1.5
2.8 ± 0.2
0.65
+0.1
–0.15
0.4
+0.1 –
0.05
2
1
3
0.4
+0.1 –
0.05
0.95
0.95
2.9 ± 0.2
0.3
1.1 to 1.4
0 to 0.1
0.16
+0.1 –
0.06
Marking
1: Emitter
2: Base
3: Collector
Document No. TC-1481C
(O.D. No. TC-5172C)
Date Published July 1995 P
Printed in Japan
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 0.1 µA VCB = 60 V, IE = 0
Emitter Cutoff Current IEBO 0.1 µA VEB = 5.0 V, IC = 0
DC Current Gain hFE 90 200 600 VCE = 6.0 V, IC = 1.0 mA*
Collector Saturation Voltage VCE(sat) 0.15 0.3 V IC = 100 mA, IB = 10 mA*
Base to Saturation Voltage VBE(sat) 0.86 1.0 V IC = 100 mA, IB = 10 mA*
Base Emitter Voltage VBE 0.55 0.62 0.65 V VCE = 6.0 V, IC = 1.0 mA*
Gain Bandwidth Product fT 250 MHz VCE = 6.0 V, IE = –10 mA
Output Capacitance Cob 3.0 pF VCB = 6.0 V, IE = 0, f = 1.0 MHz
* Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2 %
hFE Classification
Marking L4 L5 L6 L7
hFE 90 to 180 135 to 270 200 to 400 300 to 600