1
Transistor
2SC1518
Silicon NPN epitaxial planer type
For high-frequency bias oscillation of tape recorders
For DC-DC converter
n
Features
l Low collector to emitter saturation voltage V
CE(sat)
.
l Satisfactory operation performances and high efficiency with a
low-voltage power supply.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
5.9– 0.2
2.54– 0.15
0.7– 0.1
4.9– 0.2
8.6
–
0.2
0.7
+0.3 –0.2
13.5
–
0.5
3.2
0.45
+0.2
–0.1
1.271.27
0.45
+0.2
–0.1
132
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
25
20
5
1.5
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
BE(sat)
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 25V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10m A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 2V, I
C
= 500mA
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 500mA, I
B
= 50mA
*2
I
C
= 1A, I
B
= 50mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
25
20
5
90
50
typ
100
150
12
max
100
1
330
1.2
0.5
20
Unit
nA
m A
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank Q R S
h
FE1
90 ~ 155 130 ~ 220 185 ~ 330
*2
Pulse measurement