1
Transistor
2SC1383, 2SC1384
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SA683 and 2SA684
n
Features
l Low collector to emitter saturation voltage V
CE(sat)
.
l Complementary pair with 2SA683 and 2SA684.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
5.9– 0.2
2.54– 0.15
0.7– 0.1
4.9– 0.2
8.6
–
0.2
0.7
+0.3 –0.2
13.5
–
0.5
3.2
0.45
+0.2
–0.1
1.271.27
0.45
+0.2
–0.1
132
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
60
25
50
5
1.5
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
2SC1383
2SC1384
2SC1383
2SC1384
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10m A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 10V, I
C
= 500mA
*2
V
CE
= 5V, I
B
= 1A
*2
I
C
= 500mA, I
B
= 50mA
*2
I
C
= 500mA, I
B
= 50mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
30
60
25
50
5
85
50
typ
160
100
0.2
0.85
200
11
max
0.1
340
0.4
1.2
20
Unit
m A
V
V
V
V
V
MHz
pF
2SC1383
2SC1384
2SC1383
2SC1384
*1
h
FE1
Rank classification
Rank Q R S
h
FE1
85 ~ 170 120 ~ 240 170 ~ 340
*2
Pulse measurement